ADSORPTION AND REACTIONS OF DIETHYLSILANE ON SI(100)

The adsorption and thermal decomposition of diethylsilane on the Si(100)2 x 1 surface was studied using temperature programmed desorption mass spectrometry and high resolution electron energy loss spectroscopy. Diethylsilane dissociatively adsorbed to a saturation coverage of almost-equal-to 0.25 ML. Adsorbate thermal decomposition produced ethylene and hydrogen which desorbed at 700 and 800 K, respectively. Hydrogen desorption occurred exclusively from the 2 x 1 monohydride state. Thermal decomposition proceeded by beta-hydride elimination which facilitated the clean removal of the ligand groups, resulting in a carbon-free layer of silicon. An additional adsorption process, which eliminated H-2 during the dissociative adsorption, occurred at surface defect sites.