TRANSIENT AND TOTAL DOSE RADIATION CHARACTERISTICS OF AN SOS LSI ARRAY

被引:3
作者
BRUCKER, GJ
机构
关键词
D O I
10.1109/T-ED.1978.19211
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:982 / 988
页数:7
相关论文
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BRUCKER, GJ ;
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[2]  
STASSINOPOULOUS EG, 1977, IEEE T NUCL SCI, V24
[3]   DEPENDENCE OF INTERFACE-STATE BUILDUP ON HOLE GENERATION AND TRANSPORT IN IRRADIATED MOS CAPACITORS [J].
WINOKUR, PS ;
MCGARRITY, JM ;
BOESCH, HE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1580-1585