DEPENDENCE OF INTERFACE-STATE BUILDUP ON HOLE GENERATION AND TRANSPORT IN IRRADIATED MOS CAPACITORS

被引：118

作者：

WINOKUR, PS ^{[1
]}

MCGARRITY, JM ^{[1
]}

BOESCH, HE ^{[1
]}

机构：

[1] HARRY DIAMOND LABS, ADELPHI, MD 20783 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1580 / 1585

页数：6

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