ABRUPT INTERFACE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - CARRIER HEATING AND JUNCTION CHARACTERISTICS

被引：20

作者：

RAMBERG, LP ^{[1
]}

ISHIBASHI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LAB, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.340074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：809 / 820

页数：12

相关论文

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