COMPARISON OF COMPOSITIONALLY GRADED TO ABRUPT EMITTER-BASE JUNCTIONS USED IN THE HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：31

作者：

ENQUIST, PM ^{[1
]}

RAMBERG, LP ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.337897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2663 / 2669

页数：7

共 7 条

[1] ANKRI D, 1983, I PHYS C SER, V65, P431
[2] ENQUIST PM, 1985, I PHYS C SER, V74, P599
[3] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
HAYES, JR
CAPASSO, F
MALIK, RJ
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 949 - 951
[4] CURRENT GAIN ENHANCEMENT IN GRADED BASE ALGAAS/GAAS HBTS ASSOCIATED WITH ELECTRON-DRIFT MOTION
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (04): : L241 - L243
[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[6] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
NAKAJIMA, O
NAGATA, K
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08): : L596 - L598
[7] EMITTER BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CHARACTERISTICS
YOSHIDA, J
KURATA, M
MORIZUKA, K
HOJO, A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1714 - 1721