EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：81

作者：

NAKAJIMA, O

NAGATA, K

ITO, H

ISHIBASHI, T

SUGETA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 08期

关键词：

D O I：

10.1143/JJAP.24.L596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L596 / L598

页数：3

共 8 条

[1] Asbeck P. M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P864
[2] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS
ASBECK, PM
MILLER, DL
ANDERSON, RJ
EISEN, FH
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312
[3] Dubon C., 1983, International Electron Devices Meeting 1983. Technical Digest, P689
[4] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L635 - L637
[5] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 214 - 216
[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[7] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P137
[8] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
TOMIZAWA, K
AWANO, Y
HASHIZUME, N
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 362 - 364