MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：56

作者：

TOMIZAWA, K

AWANO, Y

HASHIZUME, N

机构：

来源：

关键词：

D O I：

10.1109/EDL.1984.25947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：362 / 364

页数：3

共 6 条

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[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 126 - 130
[4] COMPUTER-ANALYSIS OF HETEROJUNCTION AND GRADED COMPOSITION SOLAR-CELLS
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[5] INVESTIGATION OF TRANSIENT ELECTRONIC TRANSPORT IN GAAS FOLLOWING HIGH-ENERGY INJECTION
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HESS, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1906 - 1911
[6] MONTE-CARLO SIMULATION OF SUB-MICRON GAAS N+-I(N)-N+ DIODE
TOMIZAWA, K
AWANO, Y
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KAWASHIMA, M
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (04): : 131 - 136