INVESTIGATION OF TRANSIENT ELECTRONIC TRANSPORT IN GAAS FOLLOWING HIGH-ENERGY INJECTION

被引：47

作者：

TANG, JYF

HESS, K

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 12期

关键词：

D O I：

10.1109/T-ED.1982.21050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1906 / 1911

页数：6

相关论文

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