CURRENT GAIN ENHANCEMENT IN GRADED BASE ALGAAS/GAAS HBTS ASSOCIATED WITH ELECTRON-DRIFT MOTION

被引：38

作者：

ITO, H

ISHIBASHI, T

SUGETA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 04期

关键词：

D O I：

10.1143/JJAP.24.L241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L241 / L243

页数：3

共 8 条

[1] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR
CAPASSO, F
TSANG, WT
BETHEA, CG
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LEVINE, BF
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 93 - 95
[2] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
HAYES, JR
CAPASSO, F
MALIK, RJ
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 949 - 951
[3] BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE
HAYES, JR
CAPASSO, F
GOSSARD, AC
MALIK, RJ
WIEGMANN, W
[J]. ELECTRONICS LETTERS, 1983, 19 (11) : 410 - 411
[4] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L635 - L637
[5] ITO H, 1984, 16TH INT C SOL STAT, P351
[6] Kroemer H., 1957, RCA REV, V18, P332
[7] (GAAL)AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH GRADED COMPOSITION IN THE BASE
MILLER, DL
ASBECK, PM
ANDERSON, RJ
EISEN, FH
[J]. ELECTRONICS LETTERS, 1983, 19 (10) : 367 - 368
[8] SZE SM, 1981, PHYSICS SEMICONDUCTO