BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE

被引：55

作者：

HAYES, JR ^{[1
]}

CAPASSO, F ^{[1
]}

GOSSARD, AC ^{[1
]}

MALIK, RJ ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1049/el:19830281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：410 / 411

页数：2

共 9 条

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RIOU, J
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 816 - 818
[2] ASBECK PM, 1982, IEEE ELECTRON DEVICE, V3, P366
[3] BENEKING H, 1981, ELECTRON LETT, V18, P25
[4] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR
CAPASSO, F
TSANG, WT
BETHEA, CG
HUTCHINSON, AL
LEVINE, BF
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 93 - 95
[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[6] Kroemer H., 1957, RCA REV, V18, P332
[7] ELECTRON-DRIFT VELOCITY-MEASUREMENT IN COMPOSITIONALLY GRADED ALXGA1-XAS BY TIME-RESOLVED OPTICAL PICOSECOND REFLECTIVITY
LEVINE, BF
TSANG, WT
BETHEA, CG
CAPASSO, F
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 470 - 472
[8] LEVINE BF, 1983, APPL PHYS LETT, V43
[9] LOGAN RA, 1973, J ELECTRO CHEM SOC, V10, P1385