ELECTRON-DRIFT VELOCITY-MEASUREMENT IN COMPOSITIONALLY GRADED ALXGA1-XAS BY TIME-RESOLVED OPTICAL PICOSECOND REFLECTIVITY

被引：34

作者：

LEVINE, BF

TSANG, WT

BETHEA, CG

CAPASSO, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.93535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：470 / 472

页数：3

共 19 条

[1]

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[8] INVESTIGATION OF HOLE INJECTION IN TRANSISTOR ACTION [J].

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[9] TRANSPORT OF MINORITY-CARRIERS IN GRADED-COMPOSITION SEMICONDUCTORS AND ITS IMPACT ON GRADED-BAND-GAP BASE TRANSISTORS OPERATED AT HIGH CURRENTS [J].

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[10]

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