ON THEORY OF COMPENSATION IN LITHIUM DRIFTED SEMICONDUCTOR DETECTORS

被引:18
作者
LAUBER, A
机构
[1] AB Atomenergie, Studsvik
来源
NUCLEAR INSTRUMENTS & METHODS | 1969年 / 75卷 / 02期
关键词
D O I
10.1016/0029-554X(69)90613-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The lithium ion drift method produces detectors with a highly but not perfectly compensated intrinsic region. The amount of fixed space charge left in the compensated layer and its dependence on drift and clean-up parameters is of great practical interest. The imperfect compensation is mainly due to the presence in the compensated layer of thermally generated electron-hole pairs swept apart by the voltage applied to the detector during drift. A theoretical model is developed which takes into account the influence on the fixed space charge of mobile carrier generation and recombination. When recombination of free electrons and holes is negligible the theory predicts the formation of linear space charge gradients. When recombination is strong a constant space charge throughout a large part of the compensated layer may result. The theoretical calculations are compared with experimental findings. The influence of space charge on detector performance is discussed. © 1969.
引用
收藏
页码:297 / &
相关论文
共 30 条
[1]   ON VARIATION WITH TIME OF DRIFT REGION IN SI(LI) DETECTORS [J].
ANTONOV, A ;
YUSKESSELIEVA, L .
NUCLEAR INSTRUMENTS & METHODS, 1968, 64 (02) :217-+
[2]  
ANTONOV AS, 1966, FIZ TVERD TELA+, V8, P1061
[3]   ON MECHANISM OF LITHIUM ION DRIFT IN ELECTRICAL FIELD OF A P-N JUNCTION IN SILICON [J].
ANTONOV, AS .
PHYSICA STATUS SOLIDI, 1966, 16 (02) :761-&
[4]  
ANTONOV AS, 1966, SOV PHYS DOKL, V10, P956
[5]  
ANTONOV AS, 1965, RUSS J PHYS CHEM, V39, P1199
[6]   CONSTRUCTION AND PERFORMANCES OF SILICON LITHIUM DRIFTED DETECTORS [J].
BERTOLINI, G ;
CAPPELLANI, F ;
RESTELLI, G .
NUCLEAR INSTRUMENTS & METHODS, 1965, 32 (01) :86-+
[7]   GAMMA-RAY SPECTRUM OBTAINED WITH A LITHIUM-DRIFTED P-I-N JUNCTION IN GERMANIUM [J].
FRECK, DV ;
WAKEFIELD, J .
NATURE, 1962, 193 (4816) :669-&
[8]   DIFFUSION OF LITHIUM INTO GERMANIUM AND SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
PHYSICAL REVIEW, 1953, 91 (01) :193-193
[9]  
GEBALLE TH, 1960, SEMICONDUCTORS, P349
[10]   ON ACCURACY OF ACCEPTOR COMPENSATION BY LITHIUM ION DRIFT [J].
GIBBONS, PE ;
IREDALE, P .
NUCLEAR INSTRUMENTS & METHODS, 1967, 53 (01) :1-&