DONOR CONCENTRATION AT THE SURFACE OF A DIFFUSED N-TYPE LAYER ON P-TYPE GERMANIUM

被引：6

作者：

GLANG, R

EASTON, WB

机构：

来源：

关键词：

D O I：

10.1149/1.2427854

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：758 / 763

页数：6

共 19 条

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[3] THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS
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SMITS, FM
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[6] IMPURITY CENTERS IN GE AND SI
BURTON, JA
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[8] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS INTO GERMANIUM
FULLER, CS
[J]. PHYSICAL REVIEW, 1952, 86 (01): : 136 - 137
[10] HASTINGS C, 1955, APPROXIMATIONS DIGIT, P186