ELECTRON-BEAM DIRECT WRITING TECHNOLOGY FOR 64-MB DRAM LSIS

被引:16
作者
MURAI, F [1 ]
NAKAYAMA, Y [1 ]
SAKAMA, I [1 ]
KAGA, T [1 ]
NAKAGOME, Y [1 ]
KAWAMOTO, Y [1 ]
OKAZAKI, S [1 ]
机构
[1] HITACHI LTD,VLSI ENGN,KODAIRA,TOKYO 187,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期
关键词
ELECTRON BEAM DIRECT WRITING; DRAM; CHARGING PROBLEM; PROXIMITY EFFECT CORRECTION; PATTERN CLASSIFICATION METHOD; SUBSIDIARY EXPOSURE METHOD;
D O I
10.1143/JJAP.29.2590
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper describes the electron beam direct writing technology for 64-Mb DRAM LSIs including a resist process for 0.3-mu-m resolution, the prevention of the charging problem by a conducting polymer, and proximity effect correction by both the pattern classification method and the subsidiary exposure method. A large amount of pattern data is processed after dividing the whole chip data into peripheral circuits and 256-kb memory mats. An experimental 64-Mb DRAM LSI is fabricated by these technologies.
引用
收藏
页码:2590 / 2595
页数:6
相关论文
共 10 条
  • [1] PROXIMITY EFFECT CORRECTION FOR AN ELECTRON-BEAM DIRECT WRITING SYSTEM EX-7
    ABE, T
    IKEDA, N
    KUSAKABE, H
    YOSHIKAWA, R
    TAKIGAWA, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1524 - 1527
  • [2] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
    CHANG, THP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
  • [3] Kawamoto Y., 1990, 1990 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.90CH2874-6), P13, DOI 10.1109/VLSIT.1990.110984
  • [4] THE EFFECT OF ACCELERATION VOLTAGE ON LINEWIDTH CONTROL WITH A VARIABLE-SHAPED ELECTRON-BEAM SYSTEM
    MURAI, F
    OKAZAKI, S
    SAITO, N
    DAN, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 105 - 109
  • [5] MURAI F, 1908, P IEEE INT ELECTRON, P558
  • [6] MURAI F, 1988, 1ST MICR C, P36
  • [7] OKAZAKI S, 1990, P VLSI WORKSHOP NEW, P58
  • [8] CORRECTIONS TO PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY .1. THEORY
    PARIKH, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4371 - 4377
  • [9] TERASAWA T, 1989, P SOC PHOTO-OPT INS, V1088, P25, DOI 10.1117/12.953131
  • [10] PRISM - PROCESS FOR RESIST PROFILE IMPROVEMENT WITH SURFACE MODIFICATION
    YOSHIMURA, T
    MURAI, F
    SHIRAISHI, H
    OKAZAKI, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2249 - 2253