SIGE-HBTS WITH HIGH F(T) AT MODERATE CURRENT DENSITIES

被引：54

作者：

SCHUPPEN, A ^{[1
]}

GRUHLE, A ^{[1
]}

KIBBEL, H ^{[1
]}

ERBEN, U ^{[1
]}

KONIG, U ^{[1
]}

机构：

[1] UNIV ULM,DEPT ELECTRON DEVICES & CIRCUITS,D-89069 ULM,GERMANY

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 14期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTORS; SILICON-GERMANIUM;

D O I：

10.1049/el:19940774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-germanium heterojunction bipolar transistors (SiG-HBTs) have been developed with regard to high cutoff frequencies within a wide collector current range. Unity current gain frequencies f(T) high as 116GHz were obtained at a collector current density of 2 x 10(5) A/cm2. In addition, the FWHM of cutoff frequency f(T) against collector current exceeds one and a half decades. Calculations indicate that the ratio of the collector to emitter area essentially determines the current density range of a high frequency HBT.

引用

页码：1187 / 1188

页数：2

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