MBE-GROWN SI/SIGE HBTS WITH HIGH-BETA, FT, AND FMAX

被引：97

作者：

GRUHLE, A ^{[1
]}

KIBBEL, H ^{[1
]}

KONIG, U ^{[1
]}

ERBEN, U ^{[1
]}

KASPER, E ^{[1
]}

机构：

[1] UNIV ULM,DEPT ELECTR DEVICES & CIRCUITS,W-7900 ULM,GERMANY

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 04期

关键词：

D O I：

10.1109/55.145022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si/SiGe heterojunction bipolar transistors (HBT's) have been fabricated by growing the complete layer structure with MBE. The typical base doping of 2 . 10(19) cm-3 largely exceeded the emitter impurity level and led to sheet resistances of about 1 k OMEGA/open-square-box. The devices exhibited 500-V Early voltage, and a maximum room-temperature current gain of 550 rising to 13000 at 77 K. Devices built on buried-layer substrates had an f(max) of 40 GHz, the highest value reported for Si/SiGe HBT's. The transit frequency reached 42 GHz, a record for MBE-grown transistors of this kind.

引用

页码：206 / 208

页数：3

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