THE IMPORTANCE OF NEUTRAL BASE RECOMBINATION IN COMPROMISING THE GAIN OF SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：26

作者：

SHAFI, ZA ^{[1
]}

GIBBINGS, CJ ^{[1
]}

ASHBURN, P ^{[1
]}

POST, IRC ^{[1
]}

TUPPEN, CG ^{[1
]}

GODFREY, DJ ^{[1
]}

机构：

[1] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 08期

关键词：

D O I：

10.1109/16.119045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si/SiGe heterojunction bipolar transistors have been fabricated with very thin (21.4 nm), heavily doped (5 x 10(19) cm-3) bases. Electrical results from these transistors are presented, and compared with results from comparable silicon homojunction control devices. These results indicate that the collector current is enhanced by a factor of 13, but the potential gain enhancement is compromised by a six-fold increase in base current. The base current is shown to be strongly dependent upon the collector/base voltage, indicating that recombination in the neutral base is the mechanism responsible for the increased base current. The recombination can only be modeled if the lifetime near the collector/base junction is significantly lower than elsewhere in the base. A simple two-region lifetime model predicts a value of 3.0 x 10(-13) s close to the collector/base junction.

引用

页码：1973 / 1976

页数：4

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