BANDGAP AND TRANSPORT-PROPERTIES OF SI1-XGEX BY ANALYSIS OF NEARLY IDEAL SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：136

作者：

KING, CA ^{[1
]}

HOYT, JL ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,SCH ENGN,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2093 / 2104

页数：12

相关论文

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