ATOMIC LAYER EPITAXY GROWN HETEROJUNCTION BIPOLAR-TRANSISTOR HAVING A CARBON-DOPED BASE

被引：32

作者：

BHAT, R

HAYES, JR

COLAS, E

ESAGUI, R

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：442 / 443

页数：2

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共 6 条

[1] COLAS E, IN PRESS CONTROL IMP
[2] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY
DENBAARS, SP
BEYLER, CA
HARIZ, A
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1530 - 1532
[3] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
HAYES, JR
CAPASSO, F
MALIK, RJ
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 949 - 951
[4] ILLGEMS M, 1977, J APPL PHYS, V48, P1278
[5] ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY
KOBAYASHI, N
MAKIMOTO, T
HORIKOSHI, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1435 - 1437
[6] MAKIMOTO T, 1986, JPN J APPL PHYS, V25, P513