ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY

被引：147

作者：

KOBAYASHI, N

MAKIMOTO, T

HORIKOSHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 20期

关键词：

D O I：

10.1063/1.97846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1435 / 1437

页数：3

共 9 条

[1]

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[2]

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[4] EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY [J].

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[5] MODULATION DOPED N-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY [J].

MAKIMOTO, T ;

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[6] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J].

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[7] GAAS SAWTOOTH SUPERLATTICE LASER EMITTING AT WAVELENGTHS LAMBDA GREATER-THAN 0.9 MU-M [J].

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[8]

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[9] INTENTIONAL P-TYPE DOPING BY CARBON IN METALORGANIC MBE OF GAAS [J].

WEYERS, M ;

PUTZ, N ;

HEINECKE, H ;

HEYEN, M ;

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BALK, P .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :57-59

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