GAAS SAWTOOTH SUPERLATTICE LASER EMITTING AT WAVELENGTHS LAMBDA GREATER-THAN 0.9 MU-M

被引：39

作者：

SCHUBERT, EF

FISCHER, A

HORIKOSHI, Y

PLOOG, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：219 / 221

页数：3

共 10 条

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[2]

PEARSALL TP, 1982, GAINASP ALLOY SEMICO

[3]

SCHUBERT EF, 1985, PHYS REV B, V32, P1127

[4]

SCHUBERT EF, UNPUB

[5] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

ALAVI, K ;

WAGNER, WR ;

PEARSALL, TP ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :845-847

[6] AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M [J].

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3861-3864

[7] HETEROSTRUCTURE SEMICONDUCTOR-LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) :1119-1132

[8] EXTENSION OF LASING WAVELENGTHS BEYOND 0.87 MU-M IN GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS BY IN INCORPORATION IN THE GAAS ACTIVE LAYERS DURING MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :661-663

[9] OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES [J].

WEISBUCH, C ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1981, 38 (08) :709-712

[10]

ZRENNER A, UNPUB

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