EXTENSION OF LASING WAVELENGTHS BEYOND 0.87 MU-M IN GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS BY IN INCORPORATION IN THE GAAS ACTIVE LAYERS DURING MOLECULAR-BEAM EPITAXY

被引：14

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 09期

关键词：

D O I：

10.1063/1.92496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：661 / 663

页数：3

共 18 条

[1]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[2]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[3]

ANTHONY PJ, UNPUBLISHED

[4] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS [J].

DUTTA, NK ;

NELSON, RJ ;

BARNES, PA .

ELECTRONICS LETTERS, 1980, 16 (17) :653-654

[5] RELIABILITY OF (ALGA)AS CW LASER-DIODES [J].

ETTENBERG, M ;

KRESSEL, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :186-196

[6] DEGRADATION OF ALXGA1-X AS HETEROJUNCTION ELECTROLUMINESCENT DEVICES [J].

ETTENBERG, M ;

KRESSEL, H ;

LOCKWOOD, HF .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :82-85

[7] GAAS LASERS WITH CONSISTENTLY LOW DEGRADATION RATES AT ROOM-TEMPERATURE [J].

GOODWIN, AR ;

PETERS, JR ;

PION, M ;

BOURNE, WO .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :110-113

[8] RELIABILITY OF DH GAAS LASERS AT ELEVATED-TEMPERATURES [J].

HARTMAN, RL ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :239-242

[9] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS [J].

HARTMAN, RL ;

SCHUMAKER, NE ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :756-759

[10] INITIAL DEGRADATION MODE OF LONG-LIFE (GAAL)AS-GAAS LASERS [J].

HWANG, CJ .

APPLIED PHYSICS LETTERS, 1977, 30 (03) :167-169

← 1 2 →