INITIAL DEGRADATION MODE OF LONG-LIFE (GAAL)AS-GAAS LASERS

被引：16

作者：

HWANG, CJ ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 03期

关键词：

D O I：

10.1063/1.89320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：167 / 169

页数：3

共 28 条

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[2]

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[4] HETEROJUNCTION DIODES OF (ALGA)AS-GAAS WITH IMPROVED DEGRADATION RESISTANCE [J].

ETTENBERG, M ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :478-480

[5] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J].

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HWANG, CJ ;

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APPLIED PHYSICS LETTERS, 1973, 23 (04) :181-183

[6] RELIABILITY OF DH GAAS LASERS AT ELEVATED-TEMPERATURES [J].

HARTMAN, RL ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :239-242

[7] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

OHARA, S ;

NEWMAN, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252

[8]

HWANG CJ, 1975, 7TH SEM M NAT SCI F

[9] GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS [J].

ITO, R ;

NAKASHIMA, H ;

NAKADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (08) :1321-1322

[10] ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION AT ALXGA1-XAS-GAAS HETERO-INTERFACE [J].

JOHNSTON, WD ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :140-142

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