VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERS

被引：20

作者：

BROSSON, P ^{[1
]}

RIPPER, JE ^{[1
]}

PATEL, NB ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS GLEB WATAGHIN,CAMPINAS,BRAZIL

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1973年 / QE 9卷 / 02期

关键词：

D O I：

10.1109/JQE.1973.1077455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：273 / 280

页数：8

相关论文

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[6] STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS - MODE STRUCTURE AND CW OPERATION ABOVE ROOM TEMPERATURE
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[7] BEHAVIOR OF SPONTANEOUS EMISSION ACROSS THRESHOLD IN GAAS JUNCTION LASERS
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[8] RIPPER JE, 1972, IEEE J QUANTUM ELECT, VQE 8, P74
[9] CURRENT DEPENDENCE OF INTENSITY OF SPONTANEOUS EMISSION OF GAAS INJECTION LASERS TO FULL OPERATING POWER
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[10] SOMMERS HS, TO BE PUBLISHED