BEHAVIOR OF SPONTANEOUS EMISSION ACROSS THRESHOLD IN GAAS JUNCTION LASERS

被引：12

作者：

RIPPER, JE

BROSSON, P

PATEL, NB

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 03期

关键词：

D O I：

10.1063/1.1654306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：98 / &

共 15 条

[1] OPTIMUM STRIP WIDTH FOR CONTINUOUS OPERATION OF GAAS JUNCTION LASERS [J].

DYMENT, JC ;

RIPPER, JE ;

ZACHOS, TH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1802-+

[2] HERMITE-GAUSSIAN MODE PATTERNS IN GAAS JUNCTION LASERS [J].

DYMENT, JC .

APPLIED PHYSICS LETTERS, 1967, 10 (03) :84-&

[3] QUANTUM-MECHANICAL RATE EQUATIONS FOR SEMICONDUCTOR LASERS [J].

HAUG, H .

PHYSICAL REVIEW, 1969, 184 (02) :338-+

[4] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[5] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].

NELSON, DF ;

GERSHENZON, M ;

ASHKIN, A .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184

[6] COUPLED LONGITUDINAL MODE PULSING IN SEMICONDUCTOR LASERS [J].

PAOLI, TL ;

RIPPER, JE .

PHYSICAL REVIEW LETTERS, 1969, 22 (21) :1085-+

[7]

PAOLI TL, 1969, IEEE J QUANTUM ELECT, VQE 5, P271

[8]

POPOV YM, 1970, SOV PHYS SEMICOND+, V3, P943

[9]

POPOV YM, 1969, SOV PHYS SEMICOND+, V3, P685

[10]

RIPPER JE, 1972, IEEE J QUANTUM ELECT, VQE 8, P74

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