HETEROSTRUCTURE SEMICONDUCTOR-LASERS PREPARED BY MOLECULAR-BEAM EPITAXY

[1] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 254 - 256

[2] REDUCED THRESHOLD CURRENT TEMPERATURE-DEPENDENCE IN DOUBLE HETEROSTRUCTURE LASERS DUE TO SEPARATE P-N AND HETEROJUNCTIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 1030 - 1035

[3] ASAHI H, 1982, OCT INT SEM LAS C OT

[4] BURT MG, COMMUNICATION

[5] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[6] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390

[7] CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421

[8] MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 340 - 342

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 607 - 609

[10] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21

[1] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 254 - 256

[2] REDUCED THRESHOLD CURRENT TEMPERATURE-DEPENDENCE IN DOUBLE HETEROSTRUCTURE LASERS DUE TO SEPARATE P-N AND HETEROJUNCTIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 1030 - 1035

[3] ASAHI H, 1982, OCT INT SEM LAS C OT

[4] BURT MG, COMMUNICATION

[5] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[6] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390

[7] CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421

[8] MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 340 - 342

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 607 - 609

[10] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21