HETEROSTRUCTURE SEMICONDUCTOR-LASERS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：48

作者：

TSANG, WT

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 10期

关键词：

D O I：

10.1109/JQE.1984.1072279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1119 / 1132

页数：14

共 79 条

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