REDUCED TEMPERATURE-DEPENDENCE OF THRESHOLD OF (AL,GA)AS LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

PAWLIK, JR

TSANG, WT

NASH, FR

HARTMAN, RL

SWAMINATHAN, V

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：974 / 976

页数：3

共 23 条

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[2]

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2949-2950

[8] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J].

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[9] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

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[10] RELIABILITY OF DH GAAS LASERS AT ELEVATED-TEMPERATURES [J].

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