HETEROSTRUCTURE SEMICONDUCTOR-LASERS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：48

作者：

TSANG, WT

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 10期

关键词：

D O I：

10.1109/JQE.1984.1072279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1119 / 1132

页数：14

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共 79 条

[71] CW NARROW BEAM (ALGA)AS MULTIQUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[72] EFFECTS OF LATERAL CURRENT SPREADING, CARRIER OUT-DIFFUSION, AND OPTICAL-MODE LOSSES ON THRESHOLD CURRENT-DENSITY OF GAAS-ALXGA1-XAS STRIPE-GEOMETRY DH LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1031-1044

[73] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788

[74] SYMMETRIC SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS WITH LOW THRESHOLD AND NARROW BEAM DIVERGENCE BY MBE [J].

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ELECTRONICS LETTERS, 1980, 16 (25-2) :939-940

[75] CW ELECTRO-OPTICAL CHARACTERISTICS OF GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS WITH PROTON-DELINEATED STRIPE [J].

TSANG, WT ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :551-553

[76] A VISIBLE (ALGA)AS HETEROSTRUCTURE LASER GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :193-194

[77]

TSANG WY, UNPUB

[78]

YAMAKOSHI S, 1983, 4TH P INT C INT OPT

[79] 1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXY [J].

YANASE, T ;

KATO, Y ;

MITO, I ;

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KOBAYASHI, K ;

LANG, R .

ELECTRONICS LETTERS, 1983, 19 (17) :700-701

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