1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXY

被引：28

作者：

YANASE, T

KATO, Y

MITO, I

YAMAGUCHI, M

NISHI, K

KOBAYASHI, K

LANG, R

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 17期

关键词：

D O I：

10.1049/el:19830477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：700 / 701

页数：2

相关论文

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[4] LPE IN1-XGAXP1-ZASZ(X-0.12,Z-0.26) DH LASER WITH MULTIPLE THIN-LAYER (LESS-THAN 500 A) ACTIVE REGION
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[6] STRUCTURE-DEPENDENT THRESHOLD CURRENT-DENSITY IN INGAASP QUANTUM WELL LASERS
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[7] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 845 - 847
[8] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788
[9] LASER OSCILLATION FROM QUANTUM STATES IN VERY THIN GAAS-AL0.2GA0.8AS MULTILAYER STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1975, 26 (08) : 463 - 465
[10] YANASE T, 1983, UNPUB JPN J APPL PHY, V22