FLOW-RATE MODULATION EPITAXY OF GAAS

被引:104
作者
KOBAYASHI, N
MAKIMOTO, T
HORIKOSHI, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 12期
关键词
D O I
10.1143/JJAP.24.L962
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L962 / L964
页数:3
相关论文
共 3 条
  • [1] REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS
    KOBAYASHI, N
    MAKIMOTO, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10): : L824 - L826
  • [2] MOLECULAR LAYER EPITAXY
    NISHIZAWA, J
    ABE, H
    KURABAYASHI, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200
  • [3] SUNTOLA T, 1985, 16TH C SOL STAT DEV, P647