REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS

被引:52
作者
KOBAYASHI, N
MAKIMOTO, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 10期
关键词
D O I
10.1143/JJAP.24.L824
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L824 / L826
页数:3
相关论文
共 6 条
[1]  
KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602
[2]   SELECTIVELY-DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MOCVD [J].
KOBAYASHI, N ;
FUKUI, T ;
TSUBAKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (09) :1176-1181
[3]  
MORI Y, 1982, I PHYS C SER, V63, P95
[4]   PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM [J].
SEKI, Y ;
TANNO, K ;
IIDA, K ;
ICHIKI, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1108-1112
[5]   INVESTIGATION OF THERMAL DECOMPOSITION OF TRIETHYLALUMINIUM [J].
SMITH, WL ;
WARTIK, T .
JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1967, 29 (03) :629-&
[6]   THERMAL AND PHOTOCHEMICAL DECOMPOSITION OF GASEOUS ALUMINUM TRIMETHYL [J].
YEDDANAPALLI, LM ;
SCHUBERT, CC .
JOURNAL OF CHEMICAL PHYSICS, 1946, 14 (01) :1-7