SELECTIVELY-DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MOCVD

被引：7

作者：

KOBAYASHI, N

FUKUI, T

TSUBAKI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 09期

关键词：

D O I：

10.1143/JJAP.23.1176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1176 / 1181

页数：6

共 27 条

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