HIGH-MOBILITY SELECTIVELY DOPED GAAS/GAAIAS STRUCTURES GROWN BY LOW-PRESSURE OM-VPE

被引：12

作者：

HERSEE, SD

HIRTZ, JP

BALDY, M

DUCHEMIN, JP

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 25-2期

关键词：

D O I：

10.1049/el:19820737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1076 / 1078

页数：3

共 11 条

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[3] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

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KOPP, W ;

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CHO, AY .

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[4]

FRIJLINK P, 1982, UNPUB EDITIONS PHYSI

[5] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GULDNER, Y ;

VIEREN, JP ;

VOISIN, P ;

VOOS, M ;

RAZEGHI, M ;

POISSON, MA .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :877-879

[6]

HERSEE SD, 1982, ELECTRON LETT, V18, P896

[7]

Hiyamizu S., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P113

[8] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

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DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[9] TEG IN LP-MO CVD GA0.47IN0.53AS-INP SUPER-LATTICE [J].

RAZEGHI, M ;

POISSON, MA ;

LARIVAIN, JP ;

DECREMOUX, B ;

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VOOS, M .

ELECTRONICS LETTERS, 1982, 18 (08) :339-340

[10] HIGH-SPEED LOW-POWER DCFL USING PLANAR TWO-DIMENSIONAL ELECTRON-GAS FET TECHNOLOGY [J].

TUNG, PN ;

DELESCLUSE, P ;

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LINH, NT .

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