HIGH-SPEED LOW-POWER DCFL USING PLANAR TWO-DIMENSIONAL ELECTRON-GAS FET TECHNOLOGY

被引：34

作者：

TUNG, PN

DELESCLUSE, P

DELAGEBEAUDEUF, D

LAVIRON, M

CHAPLART, J

LINH, NT

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1049/el:19820351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：517 / 518

页数：2

共 13 条

[1] PLANAR ENHANCEMENT MODE TWO-DIMENSIONAL ELECTRON-GAS FET ASSOCIATED WITH A LOW ALGAAS SURFACE-POTENTIAL [J].

DELAGEBEAUDEUF, D ;

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DELESCLUSE, P ;

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CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1982, 18 (02) :103-105

[2]

DELAGEBEAUDEUF D, SPEED POWER PLANAR 2, P510

[3] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].

DELESCLUSE, P ;

LAVIRON, M ;

CHAPLART, J ;

DELAGEBEAUDEUF, D ;

LINH, NT .

ELECTRONICS LETTERS, 1981, 17 (10) :342-344

[4] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :299-317

[5]

GREILING PT, 1980, MICROWAVE SYST NEWS, P48

[6] MBE-GROWN GAAS N-ALGAAS HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON-MOBILITY TRANSISTORS [J].

HIYAMIZU, S ;

MIMURA, T ;

ISHIKAWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :161-168

[7]

Lee F. S., 1980, Proceedings of the IEEE International Conference on Circuits and Computers ICCC 80, P697

[8] GAAS GIGABIT LOGIC-CIRCUITS USING NORMALLY-OFF MESFETS [J].

MIZUTANI, T ;

KATO, N ;

ISHIDA, S ;

OSAFUNE, K ;

OHMORI, M .

ELECTRONICS LETTERS, 1980, 16 (09) :315-316

[9] QUASI-NORMALLY-OFF MESFET LOGIC FOR HIGH-PERFORMANCE GAAS ICS [J].

NUZILLAT, G ;

BERT, G ;

NGU, TP ;

GLOANEC, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1102-1109

[10] HIGH-SPEED TWO-DIMENSIONAL ELECTRON-GAS FET LOGIC [J].

TUNG, PN ;

DELAGEBEAUDEUF, D ;

LAVIRON, M ;

DELESCLUSE, P ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1982, 18 (03) :109-110

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