HIGH-SPEED TWO-DIMENSIONAL ELECTRON-GAS FET LOGIC

被引：17

作者：

TUNG, PN

DELAGEBEAUDEUF, D

LAVIRON, M

DELESCLUSE, P

CHAPLART, J

LINH, NT

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 03期

关键词：

D O I：

10.1049/el:19820073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / 110

页数：2

共 8 条

[1]

DAMAYKAVALA F, 1981, SEP GAAS REL COMP S

[2]

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[3] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].

DELESCLUSE, P ;

LAVIRON, M ;

CHAPLART, J ;

DELAGEBEAUDEUF, D ;

LINH, NT .

ELECTRONICS LETTERS, 1981, 17 (10) :342-344

[4] LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET [J].

LAVIRON, M ;

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1981, 17 (15) :536-537

[5] ANALYSIS OF GAAS-FETS FOR INTEGRATED-LOGIC [J].

LEHOVEC, K ;

ZULEEG, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1074-1091

[6]

LINH NT, 1981, SEP GAAS REL COMP S

[7] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].

MIMURA, T ;

JOSHIN, K ;

HIYAMIZU, S ;

HIKOSAKA, K ;

ABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L598-L600

[8] QUASI-NORMALLY-OFF MESFET LOGIC FOR HIGH-PERFORMANCE GAAS ICS [J].

NUZILLAT, G ;

BERT, G ;

NGU, TP ;

GLOANEC, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1102-1109

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