INTENTIONAL P-TYPE DOPING BY CARBON IN METALORGANIC MBE OF GAAS

被引：68

作者：

WEYERS, M ^{[1
]}

PUTZ, N ^{[1
]}

HEINECKE, H ^{[1
]}

HEYEN, M ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,SONDERSFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 02期

关键词：

D O I：

10.1007/BF02649903

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：57 / 59

页数：3

共 6 条

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ITO, T ;

SHINOHARA, M ;

IMAMURA, Y .

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[2] GAAS GROWTH IN METAL-ORGANIC MBE [J].

PUTZ, N ;

VEUHOFF, E ;

HEINECKE, H ;

HEYEN, M ;

LUTH, H ;

BALK, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :671-673

[3]

PUTZ N, UNPUB J CRYST GROWTH

[4] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J].

VEUHOFF, E ;

PLETSCHEN, W ;

BALK, P ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :30-34

[5] PARAMETRIC STUDIES OF GAAS GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

VODJDANI, N ;

LEMARCHAND, A ;

PARADAN, H .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :339-349

[6]

WILEY JD, 1975, SEMICONDUCT SEMIMET, V10, P154

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