SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：136

作者：

CHEN, YK

NOTTENBURG, RN

PANISH, MB

HAMM, RA

HUMPHREY, DA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 06期

关键词：

D O I：

10.1109/55.31742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：267 / 269

页数：3

相关论文

共 10 条

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS
ASBECK, PM
MILLER, DL
ANDERSON, RJ
EISEN, FH
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312
[2] METHOD OF ESTIMATING DELAY IN SWITCHING CIRCUITS + FIGURE OF MERIT OF SWITCHING TRANSISTOR
ASHAR, KG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) : 497 - &
[3] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION
DUMKE, WP
WOODALL, JM
RIDEOUT, VL
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +
[4] HAMM R, IN PRESS APPL PHYS L
[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[6] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES
LEVI, AFJ
YAFET, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 42 - 44
[7] TRANSIENT TRANSPORT IN CENTRAL-VALLEY-DOMINATED TERNARY III-V ALLOYS
MASSENGILL, LW
GLISSON, TH
HAUSER, JR
LITTLEJOHN, MA
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (07) : 725 - 734
[8] HOT-ELECTRON INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH FT OF 110-GHZ
NOTTENBURG, RN
CHEN, YK
PANISH, MB
HUMPHREY, DA
HAMM, R
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) : 30 - 32
[9] HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS
NOTTENBURG, RN
CHEN, YK
PANISH, MB
HAMM, R
HUMPHREY, DA
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 524 - 526
[10] A COMPARISON OF SEMICONDUCTOR-DEVICES FOR HIGH-SPEED LOGIC
SOLOMON, PM
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (05) : 489 - 509