HOT-ELECTRON INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH FT OF 110-GHZ

[1] FAST RESPONSE INP-INGAASP HETEROJUNCTION PHOTOTRANSISTORS [J]. ELECTRONICS LETTERS, 1981, 17 (05) : 178 - 179

[2] HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 312 - 314

[3] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 401 - 404

[4] KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[5] LEE W, 1986, IEEE ELECTR DEVICE L, V7, P683, DOI 10.1109/EDL.1986.26519

[6] ELECTRON-TRANSPORT DYNAMICS IN QUANTIZED INTRINSIC GAAS [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9402 - 9405

[7] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 42 - 44

[8] MALIK RT, 1986, IEEE ELECTRON DEV LE, V4, P383

[9] SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 2 - 7

[10] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284

[1] FAST RESPONSE INP-INGAASP HETEROJUNCTION PHOTOTRANSISTORS [J]. ELECTRONICS LETTERS, 1981, 17 (05) : 178 - 179

[2] HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 312 - 314

[3] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 401 - 404

[4] KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[5] LEE W, 1986, IEEE ELECTR DEVICE L, V7, P683, DOI 10.1109/EDL.1986.26519

[6] ELECTRON-TRANSPORT DYNAMICS IN QUANTIZED INTRINSIC GAAS [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9402 - 9405

[7] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 42 - 44

[8] MALIK RT, 1986, IEEE ELECTRON DEV LE, V4, P383

[9] SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 2 - 7

[10] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284