HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：32

作者：

NOTTENBURG, RN ^{[1
]}

BISCHOFF, JC ^{[1
]}

PANISH, MB ^{[1
]}

TEMKIN, H ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 06期

关键词：

D O I：

10.1109/EDL.1987.26631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：282 / 284

页数：3

共 11 条

[1] DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J].

ANKRI, D ;

SCAVENNEC, A ;

BESOMBES, C ;

COURBET, C ;

HELIOT, F ;

RIOU, J .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :816-818

[2]

ASBECK PM, 1984, OCT P IEEE GALL ARS, P133

[3] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

CAPASSO, F ;

MALIK, RJ ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[4] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

GOSSARD, AC ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (19) :766-767

[5]

Ishibashi T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P809

[6]

Izawa T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P328

[7]

KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[9] INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC [J].

NOTTENBURG, RN ;

TEMKIN, H ;

PANISH, MB ;

BHAT, R ;

BISCHOFF, JC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :643-645

[10]

PANISH MB, 1987, PROGR CRYSTAL GROWTH, V12, P1

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