INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC

被引：45

作者：

NOTTENBURG, RN ^{[1
]}

TEMKIN, H ^{[1
]}

PANISH, MB ^{[1
]}

BHAT, R ^{[1
]}

BISCHOFF, JC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：643 / 645

页数：3

共 11 条

[1] DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J].

ANKRI, D ;

SCAVENNEC, A ;

BESOMBES, C ;

COURBET, C ;

HELIOT, F ;

RIOU, J .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :816-818

[2]

Dubon C., 1983, International Electron Devices Meeting 1983. Technical Digest, P689

[3] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

GOSSARD, AC ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (19) :766-767

[4]

Izawa T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P328

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J].

LIN, HH ;

LEE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :839-841

[7]

NOTTENBURG RN, 1986, UNPUB APPL PHYS LETT

[8] GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y [J].

PANISH, MB ;

SUMSKI, S .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3571-3576

[9] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

TEMKIN, H ;

SUMSKI, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665

[10] NPNN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR ON INGAASP/INP [J].

SU, LM ;

GROTE, N ;

KAUMANNS, R ;

SCHROETER, H .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :28-30

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