NPNN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR ON INGAASP/INP

被引：30

作者：

SU, LM

GROTE, N

KAUMANNS, R

SCHROETER, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.96392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：28 / 30

页数：3

共 14 条

[1] HIGH-SPEED GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NEAR-BALLISTIC OPERATION [J].

ANKRI, D ;

SCHAFF, WJ ;

SMITH, P ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1983, 19 (04) :147-149

[2] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J].

BENEKING, H ;

SU, LM .

ELECTRONICS LETTERS, 1982, 18 (01) :25-26

[3]

CAMPBELL JC, 1981, IEEE J QUANTUM ELECT, V17, P264, DOI 10.1109/JQE.1981.1071072

[4]

CHOUDHURY ANMM, 1984, IEEE ELECTR DEVICE L, V5, P251, DOI 10.1109/EDL.1984.25907

[5] FAST RESPONSE INP-INGAASP HETEROJUNCTION PHOTOTRANSISTORS [J].

FRITZSCHE, D ;

KUPHAL, E ;

AULBACH, R .

ELECTRONICS LETTERS, 1981, 17 (05) :178-179

[6] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :214-216

[7]

KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[9] HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MALIK, RJ ;

HAYES, JR ;

CAPASSO, F ;

ALAVI, K ;

CHO, AY .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :383-385

[10] (GAAL)AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH GRADED COMPOSITION IN THE BASE [J].

MILLER, DL ;

ASBECK, PM ;

ANDERSON, RJ ;

EISEN, FH .

ELECTRONICS LETTERS, 1983, 19 (10) :367-368

← 1 2 →