HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：48

作者：

MALIK, RJ

HAYES, JR

CAPASSO, F

ALAVI, K

CHO, AY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 10期

关键词：

D O I：

10.1109/EDL.1983.25772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：383 / 385

页数：3

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