SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN

被引：117

作者：

LIN, HH

LEE, SC

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.96002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：839 / 841

页数：3

共 9 条

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[8] DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR-TRANSISTORS (DHBJTS) BY MBE WITH A CURRENT GAIN OF 1650 [J].

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[9] AN EMITTER GUARD-RING STRUCTURE FOR GAAS HIGH-GAIN HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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