GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS

被引：99

作者：

PANISH, MB

TEMKIN, H

SUMSKI, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：657 / 665

页数：9

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[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION
ARTHUR, JR
LEPORE, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &
[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[3] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[4] CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[5] CHO R, 1983, J VAC SCI TECHNOL A, V1, P49
[6] ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING CRACKED PHOSPHINE
CHOW, R
CHAI, YG
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 383 - 385
[7] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
FOXON, CT
JOYCE, BA
NORRIS, MT
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 132 - 140
[8] LOW THRESHOLD RIDGE WAVEGUIDE LASER AT 1.55-MU-M
KAMINOW, IP
STULZ, LW
KO, JS
MILLER, BI
FELDMAN, RD
DEWINTER, JC
POLLACK, MA
[J]. ELECTRONICS LETTERS, 1983, 19 (21) : 877 - 879
[9] ON THE DESIGN AND CHARACTERIZATION OF A NOVEL ARSINE CRACKING FURNACE UTILIZING CATALYTIC DECOMPOSITION OF ASH3 TO YIELD A PURELY MONOMERIC SOURCE OF ARSENIC FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
KAPITAN, LW
LITTON, CW
CLARK, GC
COLTER, PC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 280 - 284
[10] ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
ASAHI, H
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 841 - 846