ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING CRACKED PHOSPHINE

被引：23

作者：

CHOW, R

CHAI, YG

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 04期

关键词：

D O I：

10.1063/1.93947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：383 / 385

页数：3

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