共 12 条
- [1] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1020 - 1022
- [3] ELLIOTT RP, 1965, CONSTITUTION BINARY, P507
- [5] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
- [6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (12) : 2321 - 2325
- [7] Mc Bride B.J., 1963, NASASP3001
- [8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 259 - 272
- [10] AN X-RAY INVESTIGATION OF TRANSITION METAL PHOSPHIDES [J]. ACTA CHEMICA SCANDINAVICA, 1954, 8 (02): : 226 - 239