GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y

被引：57

作者：

PANISH, MB

SUMSKI, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3571 / 3576

页数：6

共 17 条

[1]

Anderson JB, 1974, MOL BEAMS NOZZLE SOU, P1, DOI [10.1002/0471238961.1301191913151518.a01.pub2.MolecularBeamsandLowDensityGasdynamics, DOI 10.1002/0471238961.1301191913151518.A01.PUB2.MOLECULARBEAMSANDLOWDENSITYGASDYNAMICS]

[2]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[3] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&

[4] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021

[6] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843

[7] A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY [J].

CHOW, R ;

CHAI, YG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01) :49-54

[8] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE [J].

FOXON, CT ;

JOYCE, BA ;

NORRIS, MT .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) :132-140

[9]

KAPITAN LW, J VAC SCI TECHNOL

[10] REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALX GA1-X AS HETEROSTRUCTURE LASERS BY SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

PANISH, MB ;

CASEY, HC ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1973, 22 (11) :590-591

← 1 2 →