NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES

被引：61

作者：

LEVI, AFJ

YAFET, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：42 / 44

页数：3

共 8 条

[1] THE DIELECTRIC FUNCTION OF HOLES IN SEMICONDUCTORS OF ZINCBLENDE STRUCTURE [J].

BARDYSZEWSKI, W .

SOLID STATE COMMUNICATIONS, 1986, 57 (11) :873-876

[2] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

CAPASSO, F ;

SEN, S ;

GOSSARD, AC ;

HUTCHINSON, AL ;

ENGLISH, JH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576

[3]

CHANG MC, UNPUB

[4]

FUTATSUGI T, 1987, 1986 INT EL DEV M LO, P286

[5] BASE TRANSPORT DYNAMICS IN A HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

HAYES, JR ;

LEVI, AFJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1481-1483

[6] ELECTROLUMINESCENCE FROM THE BASE OF A GAAS/ALGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

LEVI, AFJ ;

HAYES, JR ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :98-100

[7] BALLISTIC INJECTION DEVICES IN SEMICONDUCTORS [J].

LEVI, AFJ ;

HAYES, JR ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1609-1611

[8] CORRECTION [J].

LEVI, AFJ .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1312-1312

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