ELECTROLUMINESCENCE FROM THE BASE OF A GAAS/ALGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：11

作者：

LEVI, AFJ ^{[1
]}

HAYES, JR ^{[1
]}

GOSSARD, AC ^{[1
]}

ENGLISH, JH ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.97831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：98 / 100

页数：3

共 7 条

[1] ELECTROLUMINESCENCE FROM A HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

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GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :537-539

[2] BASE TRANSPORT DYNAMICS IN A HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

HAYES, JR ;

LEVI, AFJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1481-1483

[3] DYNAMICS OF EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN GAAS [J].

HAYES, JR ;

LEVI, AFJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1744-1752

[4]

ISHIBASHI T, 1984, I PHYS C SER, V74, P593

[5]

KAN Y, 1986, IEEE J QUANTUM ELECT, V22, P1837

[6] INVESTIGATION OF HOT CARRIER RELAXATION WITH PICOSECOND LASER-PULSES [J].

SHAH, J .

JOURNAL DE PHYSIQUE, 1981, 42 (NC7) :445-462

[7] LUMINESCENCE OF HIGH-DENSITY ELECTRON-HOLE PLASMA IN GAAS [J].

TANAKA, S ;

KOBAYASHI, H ;

SAITO, H ;

SHIONOYA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 49 (03) :1051-1059

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